Method of metal sputtering for integrated circuit metal routing

ABSTRACT

A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

FIELD OF THE INVENTION

The present invention relates generally to fabrication of semiconductordevices, and more specifically to methods of sputtering metal ontostructures.

BACKGROUND OF THE INVENTION

Electrical isolation between two conductive structures, such as metallines or metal bumps, will not be good in current integrated circuit(IC) without planarization. The electrical isolation problem is causedby re-deposition of conductive material/metal from the wafer holderduring pre-sputter cleaning forming stringers between adjacent metalconductive structures causing electrical shorting between thestructures.

U.S. Pat. No. 4,704,301 to Bauer et al. describes a metal (e.g.aluminum) coater wafer holder.

U.S. Pat. No. 6,267,852 B1 to Givens et al. describes a wafer holder ina sputter clean tool and method.

U.S. Pat. No. 6,340,405 B1 to Park describes a wafer holder in an etchtool.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provideimproved methods of reducing electrical shorting between adjacentconductive structures formed with a pre-sputtering cleaning step.

Other objects will appear hereinafter.

It has now been discovered that the above and other objects of thepresent invention may be accomplished in the following manner.Specifically, a wafer holder within a chamber is provided with thechamber having inner walls. The wafer holder and the inner walls of thechamber are coated with a seasoning layer. The seasoning layer beingcomprised of: a) a material etchable in a metal barrier layer etchprocess; or b) an insulating or non-conductive material. A wafer isplaced upon the seasoning layer coated wafer holder. The wafer includingtwo or more wafer conductive structures thereover. The wafer is cleanedwherein a portion of the seasoning layer is re-deposited upon the waferover and between adjacent wafer conductive structures. A metal barrierlayer is formed over at least over the wafer and the wafer conductivestructures. The wafer is removed from the chamber. A patterned maskinglayer is formed over the metal barrier layer, leaving first exposedportions of the metal barrier layer. Using the patterned masking layeras masks, at least two adjacent upper metal structures are formed overthe first exposed portions of the metal barrier layer. The patternedmasking layer is removed, exposing second exposed portions of the metalbarrier layer adjacent the at least two adjacent upper metal structures.The second exposed portions of the metal barrier layer are etched andremoved from over the wafer exposing portions of the re-depositedseasoning layer portions using the metal barrier layer etch process. Themetal barrier layer etch process also etching and removing the exposedportions of the re-deposited seasoning layer portions that are comprisedof a material etchable in the metal barrier layer etch process.

BRIEF DESCRIPTION OF THE DRAWINGS

The features and advantages of the present invention will be moreclearly understood from the following description taken in conjunctionwith the accompanying drawings in which like reference numeralsdesignate similar or corresponding elements, regions and portions and inwhich:

FIGS. 1 to 5 schematically illustrate in cross-sectional representationa preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Initial Structure—FIG. 1

FIG. 1 is a schematic illustration show in a wafer holder 10 within achamber 14. The wafer holder is preferably comprised of chromium (Cr),iron (Fe), nickel (Ni), manganese (Mn) or molybdenum (Mo) and is morepreferably comprised of Cr, Fe or Ni.

In an important step of the invention, the wafer holder 10 (and/or othertools with the chamber 14) and inner chamber walls 15 are coated, orseasoned, with a seasoning layer 16 that is preferably comprised of: (1)a material that is etchable or removable during the metal barrier layer32 (see below); or (2) an insulating or non-conducting dielectricmaterial. The etchable-material seasoning layer 16 is preferablycomprised of TiW or Ti. The insulating material seasoning layer 16 ispreferably comprised of silicon oxide, silicon nitride or alumina and ismore preferably comprised of silicon oxide.

Seasoning layer 16 preferably has a thickness of: (1) from about 500 to50,000 Å and more preferably from about 1000 to 10,000 Å when comprisedof an etchable-material; and (2) from about 500 to 10,000 Å and morepreferably from about 500 to 3000 Å when comprised of an insulatingmaterial.

Placement of Wafer 20 Onto Seasoned Wafer Holder 10—FIG. 2

As shown in FIG. 2, a wafer 20 is affixed to the seasoned wafer holder10. Wafer 20 may be a semiconductor wafer including a semiconductorstructure or substrate and active devices therein. Wafer 20 includesadjacent conductive structures 22 thereover with an uppermost intermetaldielectric layer 24 formed over the conductive structures 22. Conductivestructures 22 may be comprised of metal, for example, and may be bumpscomprised of gold, for example, solder bumps, interconnects comprised ofcopper, for example, or metal pads.

When the method of the present invention is used for post passivationtechnology the conductive structures 22 are formed above a wafer 20passivation layer 21. The passivation layer 21 has a thickness ofpreferably from about 7000 to 20,000 Å and more preferably from about10,000 to 15,000 Å and is preferably comprised of silicon oxide, siliconnitride or a composite of silicon oxide and silicon nitride and is morepreferably a composite of silicon oxide and silicon nitride.

After placement of the wafer 20 onto the wafer holder 10, portions 11 ofthe seasoning layer 16 overlying the wafer holder 10 are left exposed.

Pre-Sputter Clean 19—FIG. 2

As shown in FIG. 2, a pre-sputter clean 19 is then performed on thewafer 20. The pre-sputter clean 19 is preferably an argon (Ar⁺) sputterprocess and causes re-deposition of some of the seasoning layer 16 fromthe exposed portions 11 of the seasoning layer 16 onto the intermetaldielectric layer 24 to form intermetal dielectric layer/passivationlayer re-deposition portions 30. As shown the re-deposition portions 30may include stringer portions between adjacent conductive structures.

Formation of Barrier Metal Layer 32 and Seed Metal Layer 34—FIG. 3

As shown in FIG. 3, a barrier metal layer 32 is formed over theintermetal dielectric layer 24 and re-deposited portions 30 over wafer20. Barrier metal layer portions 32′ may be also formed over the exposedportions 11 of the seasoning layer 16 over the wafer holder 10. Barriermetal layer 32/barrier metal layer portions 32′ are preferably comprisedof TiW or Ti and has a thickness of preferably from about 50 to 5000 Åand more preferably from about 100 to 3000 Å.

A seed metal layer 34 is then formed over the barrier metal layer 32 andseed metal layer portions 34′ may be formed over the barrier metal layerportions 32. Seed metal layer 34/seed metal layer portions 34′ arepreferably comprised of copper (Cu) or gold (Au) and has a thickness ofpreferably from about 500 to 8000 Å and more preferably from about 800to 6000 Å.

Formation of Upper Metal Structures 50, 52

As shown in FIG. 4, wafer 20 is removed from the chamber 14 andpatterned mask layer portions 40, 42, 44 may be formed over thestructure of FIG. 3 leaving selected portions of the seed metal layer 34exposed. Patterned mask layer portions 40, 42, 44 are preferablycomprised of photoresist.

Then, using the patterned mask layer portions 40, 42, 44 as masks, uppermetal structures 50, 52 are then formed over the exposed portions of theseed metal layer 34, preferably using an electroplating process. Uppermetal structures 50, 52 are preferably comprised of Cu, Ni, Au, Au/TiW,Cu/Ti, Ni/Cu/Ti, Cu/Cr or Ni/Cu Cr.

Upper metal structures 50, 52 are preferably spaced apart from about 1μm to 1 mm.

As shown in FIG. 4, one 50 or more of the upper metal structure 50, 52may serve to electrically connect adjacent conductive structures 22 andone 52 or more of the upper metal structure 50, 52 may serve toelectrically connect to a single conductive structure 22.

Removal of Patterned Mask Layer Portions 40, 42, 44 and the Exposed andthen Exposed Portions of Seed Metal Layer 34, 34′ and Barrier MetalLayer 32, 32′

As shown in FIG. 5, the patterned mask layer portions 40, 42, 44 areremoved to exposed portions of the seed metal layer 34 formerlythereunder.

The now exposed portions of the seed metal layer 34 over the wafer 20are etched away as are the portions of the barrier metal layer 32thereunder to expose portions 60, 62, 64 of the intermetal dielectriclayer 24.

It is noted that the upper metal structures 50, 52 are much thicker thanthe seed metal layer 34 and so are not completely etched away during theetching of the seed metal layer 34. The thicknesses of the upper metalstructures 50, 52 can be maintained by controlling the etching time.

It is noted that if the seasoning layer 16 of the present invention wasselected to be etchable in the barrier metal layer 32 etch, there-deposited portions 30 underlying the removed portions of the barriermetal layer 32 are also etched and removed as are any stringers of there-deposited portions 30 as shown in FIG. 5. Thus, there will be noelectrical shorts between adjacent upper metal structures 50, 52.

In the alternative, if the seasoning layer 16 was selected to becomprised of an insulating or non-conducting dielectric material, anyre-deposited portions 30/stringers remaining that are under the removedportions of the seed metal layer 34 and barrier metal layer portions 32over the wafer will not conduct electricity and therefore there will beno electrical shorts between adjacent upper metal structures 50, 52.

Further processing may then proceed.

If the upper metal structures 50, 52 are bumps comprised of gold, thenthe seasoning layer 16 is preferably comprised of TiW. If the uppermetal structures 50, 52 are solder bumps, then the seasoning layer 16 ispreferably comprised of Ti. If the upper metal structures 50, 52 aremetal interconnects comprised of copper, then the seasoning layer 16 ispreferably comprised of Ti.

The method of the present invention is admirably suited for use inbump-on-active (BOA) or pad-on-active (POA) applications.

Advantages of the Invention

The advantages of one or more embodiments of the present inventioninclude lower manufacturing cost for post passivation metal routing.

While particular embodiments of the present invention have beenillustrated and described, it is not intended to limit the invention,except as defined by the following claims.

1. A method of metal sputtering, comprising the steps of: providing awafer holder within a chamber; the chamber having inner walls; coatingthe wafer holder and the inner walls of the chamber with a seasoninglayer; the seasoning layer being comprised of: a) a material etchable ina metal barrier layer etch process; or b) an insulating ornon-conductive material; placing a wafer upon the seasoning layer coatedwafer holder; the wafer including two or more wafer conductivestructures thereover; cleaning the wafer wherein a portion of theseasoning layer is re-deposited upon the wafer over and between adjacentwafer conductive structures; forming a metal barrier layer at least overthe wafer and the wafer conductive structures; removing the wafer fromthe chamber; forming a patterned masking layer over the metal barrierlayer, leaving first exposed portions of the metal barrier layer; usingthe patterned masking layer as masks, forming at least two adjacentupper metal structures over the first exposed portions of the metalbarrier layer; removing the patterned masking layer exposing secondexposed portions of the metal barrier layer adjacent the at least twoadjacent upper metal structures; and etching and removing the secondexposed portions of the metal barrier layer from over the wafer exposingportions of the re-deposited seasoning layer portions using the metalbarrier layer etch process; the metal barrier layer etch process alsoetching and removing the exposed portions of the re-deposited seasoninglayer portions that are comprised of a material etchable in the metalbarrier layer etch process. 2-66. (canceled)
 67. A method of forming adevice, comprising the steps of: providing a wafer holder within achamber; the chamber having inner walls; coating the wafer holder andthe inner walls of the chamber with a seasoning layer; placing a waferupon the seasoning layer coated wafer holder; the wafer including two ormore wafer conductive structures thereover; cleaning the wafer wherein aportion of the seasoning layer is re-deposited upon the wafer over andbetween adjacent wafer conductive structures; and forming an upper metalstructure at least over or between a set of the adjacent waferconductive structures.
 68. The method of claim 67, wherein the seasoninglayer is comprised of: a) a material etchable in a metal barrier layeretch process; or b) an insulating or non-conductive material.
 69. Themethod of claim 67, whereby the formation of the upper metal structureat least over or between a set of the adjacent wafer conductivestructures includes the sequential steps of: forming a metal barrierlayer at least over the wafer and the wafer conductive structures afterthe wafer is cleaned; removing the wafer from the chamber; forming apatterned masking layer over the metal barrier layer, leaving firstexposed portions of the metal barrier layer; using the patterned maskinglayer as masks, forming the upper metal structure over the first exposedportions of the metal barrier layer; removing the patterned maskinglayer exposing second exposed portions of the metal barrier layeradjacent the upper metal structure; and etching and removing the secondexposed portions of the metal barrier layer from over the wafer exposingportions of the re-deposited seasoning layer portions using the metalbarrier layer etch process; the seasoning layer portions being comprisedof: a) a material etchable in a metal barrier layer etch process; or b)an insulating or non-conductive material; the metal barrier layer etchprocess also etching and removing the exposed portions of there-deposited seasoning layer portions that are comprised of a materialetchable in the metal barrier layer etch process.
 70. The method ofclaim 67, whereby the wafer includes a passivation layer formed underthe two or more wafer conductive structures.
 71. The method of claim 67,further comprising the steps of: forming a metal barrier layer at leastover the wafer and the wafer conductive structures after the wafer iscleaned; and forming a seed metal layer over the metal barrier layer.72. The method of claim 67, further comprising the steps of: forming ametal barrier layer at least over the wafer and the wafer conductivestructures after the wafer is cleaned; and forming a seed metal layerover the metal barrier layer; the seed metal layer having a thickness offrom about 500 to 8000 Å and being comprised of copper or gold.
 73. Themethod of claim 67, further comprising the steps of: forming a metalbarrier layer at least over the wafer and the wafer conductivestructures after the wafer is cleaned; and forming a seed metal layerover the metal barrier layer; the seed metal layer having a thickness offrom about 800 to 6000 521 and being comprised of copper or gold. 74.The method of claim 67, wherein the wafer holder is comprised of Cr, Fe,Ni, Mn or Mo
 75. The method of claim 67, wherein the wafer holder iscomprised of Cr, Fe or Ni.
 76. The method of claim 67, wherein theseasoning layer is comprised of a material etchable in a metal barrierlayer etch process.
 77. The method of claim 67, wherein the seasoninglayer has a thickness of from about 500 to 50,000 Å.
 78. The method ofclaim 67, wherein the seasoning layer has a thickness of from about 1000to 10,000 Å.
 79. The method of claim 67, wherein the seasoning layer iscomprised of an insulating or non-conductive material.
 80. The method ofclaim 67, wherein the seasoning layer is comprised of an insulating ornon-conductive material and has a thickness of from about 500 to 10,000Å.
 81. The method of claim 67, wherein the seasoning layer is comprisedof an insulating or non-conductive material and has a thickness of fromabout 500 to 3000 Å.
 82. The method of claim 67, wherein the waferconductive structures are gold bumps and the seasoning layer iscomprised of TiW.
 83. The method of claim 67, wherein the waferconductive structures are solder bumps or copper interconnects and theseasoning layer is comprised of Ti.
 84. The method of claim 67, whereinthe wafer is cleaned using an argon cleaning process.
 85. The method ofclaim 69, wherein the metal barrier layer has a thickness of from about50 to 5000 Å.
 86. The method of claim 69, wherein the metal barrierlayer has a thickness of from about 100 to 3000 Å.
 87. The method ofclaim 67, wherein the upper metal structure is comprised of Cu, Ni, Au,Au/TiW, Cu/Ti, Ni/Cu/Ti, Cu/Cr or Ni/Cu Cr.
 88. The method of claim 67,further comprising the step of forming an intermetal dielectric layerover the wafer and the two or more wafer conductive structures.
 89. Themethod of claim 67, wherein at least two adjacent upper metal structuresare formed.
 90. The method of claim 67, wherein the seasoning layer iscomprised of TiW or Ti.
 91. The method of claim 67, wherein theseasoning layer is comprised of silicon oxide, silicon nitride oralumina.
 92. The method of claim 67, wherein the seasoning layer iscomprised of silicon oxide.
 93. The method of claim 67, wherein thewafer is cleaned using an argon sputter cleaning process.
 94. A methodof forming a device, comprising the steps of: providing a wafer holderwithin a chamber; the chamber having inner walls; coating the waferholder and the inner walls of the chamber with a seasoning layer; theseasoning layer being comprised of: a) a material etchable in a metalbarrier layer etch process; or b) an insulating or non-conductivematerial; placing a wafer upon the seasoning layer coated wafer holder;the wafer including two or more wafer conductive structures thereover;cleaning the wafer wherein a portion of the seasoning layer isre-deposited upon the wafer over and between adjacent wafer conductivestructures; and forming an upper metal structure at least over orbetween a set of the adjacent wafer conductive structures.
 95. Themethod of claim 94, whereby the formation of the upper metal structureat least over or between a set of the adjacent wafer conductivestructures includes the sequential steps of: forming a metal barrierlayer at least over the wafer and the wafer conductive structures afterthe wafer is cleaned; removing the wafer from the chamber; forming apatterned masking layer over the metal barrier layer, leaving firstexposed portions of the metal barrier layer; using the patterned maskinglayer as masks, forming the upper metal structure over the first exposedportions of the metal barrier layer; removing the patterned maskinglayer exposing second exposed portions of the metal barrier layeradjacent the upper metal structure; and etching and removing the secondexposed portions of the metal barrier layer from over the wafer exposingportions of the re-deposited seasoning layer portions using the metalbarrier layer etch process; the seasoning layer portions being comprisedof: a) a material etchable in a metal barrier layer etch process; or b)an insulating or non-conductive material; the metal barrier layer etchprocess also etching and removing the exposed portions of there-deposited seasoning layer portions that are comprised of a materialetchable in the metal barrier layer etch process.
 96. The method ofclaim 94, whereby the wafer includes a passivation layer formed underthe two or more wafer conductive structures.
 97. The method of claim 94,further comprising the steps of: forming a metal barrier layer at leastover the wafer and the wafer conductive structures after the wafer iscleaned; and forming a seed metal layer over the metal barrier layer.98. The method of claim 94, further comprising the steps of: forming ametal barrier layer at least over the wafer and the wafer conductivestructures after the wafer is cleaned; and forming a seed metal layerover the metal barrier layer; the seed metal layer having a thickness offrom about 500 to 8000 Å and being comprised of copper or gold.
 99. Themethod of claim 94, further comprising the steps of: forming a metalbarrier layer at least over the wafer and the wafer conductivestructures after the wafer is cleaned; and forming a seed metal layerover the metal barrier layer; the seed metal layer having a thickness offrom about 800 to 6000 Å and being comprised of copper or gold.
 100. Themethod of claim 94, wherein the wafer holder is comprised of Cr, Fe, Ni,Mn or Mo
 101. The method of claim 94, wherein the wafer holder iscomprised of Cr, Fe or Ni.
 102. The method of claim 94, wherein theseasoning layer is comprised of a material etchable in a metal barrierlayer etch process.
 103. The method of claim 94, wherein the seasoninglayer has a thickness of from about 500 to 50,000 Å.
 104. The method ofclaim 94, wherein the seasoning layer has a thickness of from about 1000to 10,000 Å.
 105. The method of claim 94, wherein the seasoning layer iscomprised of an insulating or non-conductive material.
 106. The methodof claim 94, wherein the seasoning layer is comprised of an insulatingor non-conductive material and has a thickness of from about 500 to10,000 Å.
 107. The method of claim 94, wherein the seasoning layer iscomprised of an insulating or non-conductive material and has athickness of from about 500 to 3000 Å.
 108. The method of claim 94,wherein the wafer conductive structures are gold bumps and the seasoninglayer is comprised of TiW.
 109. The method of claim 94, wherein thewafer conductive structures are solder bumps or copper interconnects andthe seasoning layer is comprised of Ti.
 110. The method of claim 94,wherein the wafer is cleaned using an argon cleaning process.
 111. Themethod of claim 95, wherein the metal barrier layer has a thickness offrom about 50 to b 5000 Å.
 112. The method of claim 95, wherein themetal barrier layer has a thickness of from about 100 to 3000 Å. 113.The method of claim 94, wherein the upper metal structure is comprisedof Cu, Ni, Au, Au/TiW, Cu/Ti, Ni/Cu/Ti, Cu/Cr or Ni/Cu Cr.
 114. Themethod of claim 94, further comprising the step of forming an intermetaldielectric layer over the wafer and the two or more wafer conductivestructures.
 115. The method of claim 94, wherein at least two adjacentupper metal structures are formed.
 116. The method of claim 94, whereinthe seasoning layer is comprised of TiW or Ti.
 117. The method of claim94, wherein the seasoning layer is comprised of silicon oxide, siliconnitride or alumina.
 118. The method of claim 94, wherein the seasoninglayer is comprised of silicon oxide.
 119. The method of claim 94,wherein the wafer is cleaned using an argon sputter cleaning process.120. A structure, comprising: a wafer holder having an overlyingseasoning layer; a cleaned wafer upon the seasoning layer coated waferholder; the wafer including two or more wafer conductive structuresthereover; the cleaned wafer having re-deposited seasoning layerportions upon the wafer over and between adjacent wafer conductivestructures; and an upper metal structure at least over or between a setof the adjacent wafer conductive structures.
 121. The structure of claim120, wherein the seasoning layer is comprised of: a) a material etchablein a metal barrier layer etch process; or b) an insulating ornon-conductive material.
 122. The structure of claim 120, whereby thewafer includes a passivation layer formed under the two or more waferconductive structures.
 123. The structure of claim 120, furthercomprising a metal barrier layer at least over the wafer and the waferconductive structures.
 124. The structure of claim 120, furthercomprising: a metal barrier layer at least over the wafer and the waferconductive structures; and a seed metal layer over the metal barrierlayer.
 125. The structure of claim 120, further comprising: a metalbarrier layer at least over the wafer and the wafer conductivestructures; and a seed metal layer over the metal barrier layer; theseed metal layer having a thickness of from about 500 to 8000 Å andbeing comprised of copper or gold.
 126. The structure of claim 120,further comprising: a metal barrier layer at least over the wafer andthe wafer conductive structures after the wafer is cleaned; and a seedmetal layer over the metal barrier layer; the seed metal layer having athickness of from about 800 to 6000 521 and being comprised of copper orgold.
 127. The structure of claim 120, wherein the wafer holder iscomprised of Cr, Fe, Ni, Mn or Mo
 128. The structure of claim 120,wherein the wafer holder is comprised of Cr, Fe or Ni.
 129. Thestructure of claim 120, wherein the seasoning layer is comprised of amaterial etchable in a metal barrier layer etch process.
 130. Thestructure of claim 120, wherein the seasoning layer has a thickness offrom about 500 to 50,000 Å.
 131. The structure of claim 120, wherein theseasoning layer has a thickness of from about 1000 to 10,000 Å.
 132. Thestructure of claim 120, wherein the seasoning layer is comprised of aninsulating or non-conductive material.
 133. The structure of claim 120,wherein the seasoning layer is comprised of an insulating ornon-conductive material and has a thickness of from about 500 to 10,000Å.
 134. The structure of claim 120, wherein the seasoning layer iscomprised of an insulating or non-conductive material and has athickness of from about 500 to 3000 Å.
 135. The structure of claim 120,wherein the wafer conductive structures are gold bumps and the seasoninglayer is comprised of TiW.
 136. The structure of claim 120, wherein thewafer conductive structures are solder bumps or copper interconnects andthe seasoning layer is comprised of Ti.
 137. The structure of claim 123,wherein the metal barrier layer has a thickness of from about 50 to 5000Å.
 138. The structure of claim 123, wherein the metal barrier layer hasa thickness of from about 100 to 3000 Å.
 139. The structure of claim120, wherein the upper metal structure is comprised of Cu, Ni, Au,Au/TiW, Cu/Ti, Ni/Cu/Ti, Cu/Cr or Ni/Cu Cr.
 140. The structure of claim120, further comprising an intermetal dielectric layer over the waferand the two or more wafer conductive structures.
 141. The structure ofclaim 120, wherein there are at least two adjacent upper metalstructures.
 142. The structure of claim 120, wherein the seasoning layeris comprised of TiW or Ti.
 143. The structure of claim 120, wherein theseasoning layer is comprised of silicon oxide, silicon nitride oralumina.
 144. The structure of claim 120, wherein the seasoning layer iscomprised of silicon oxide.
 145. A structure, comprising: a wafer holderhaving an overlying seasoning layer; a cleaned wafer upon the seasoninglayer coated wafer holder; the wafer including two or more waferconductive structures thereover; the seasoning layer being comprised of:a) a material etchable in a metal barrier layer etch process; or b) aninsulating or non-conductive material; the cleaned wafer havingre-deposited seasoning layer portions upon the wafer over and betweenadjacent wafer conductive structures; and an upper metal structure atleast over or between a set of the adjacent wafer conductive structures.146. The structure of claim 145, whereby the wafer includes apassivation layer formed under the two or more wafer conductivestructures.
 147. The structure of claim 145, further comprising a metalbarrier layer at least over the wafer and the wafer conductivestructures.
 148. The structure of claim 145, further comprising: a metalbarrier layer at least over the wafer and the wafer conductivestructures; and a seed metal layer over the metal barrier layer. 149.The structure of claim 145, further comprising: a metal barrier layer atleast over the wafer and the wafer conductive structures; and a seedmetal layer over the metal barrier layer; the seed metal layer having athickness of from about 500 to 8000 Å and being comprised of copper orgold.
 150. The structure of claim 145, further comprising: a metalbarrier layer at least over the wafer and the wafer conductivestructures after the wafer is cleaned; and a seed metal layer over themetal barrier layer; the seed metal layer having a thickness of fromabout 800 to 6000 Å and being comprised of copper or gold.
 151. Thestructure of claim 145, wherein the wafer holder is comprised of Cr, Fe,Ni, Mn or Mo
 152. The structure of claim 145, wherein the wafer holderis comprised of Cr, Fe or Ni.
 153. The structure of claim 145, whereinthe seasoning layer is comprised of a material etchable in a metalbarrier layer etch process.
 154. The structure of claim 145, wherein theseasoning layer has a thickness of from about 500 to 50,000 Å.
 155. Thestructure of claim 145, wherein the seasoning layer has a thickness offrom about 1000 to 10,000 Å.
 156. The structure of claim 145, whereinthe seasoning layer is comprised of an insulating or non-conductivematerial.
 157. The structure of claim 145, wherein the seasoning layeris comprised of an insulating or non-conductive material and has athickness of from about 500 to 10,000 Å.
 158. The structure of claim145, wherein the seasoning layer is comprised of an insulating ornon-conductive material and has a thickness of from about 500 to 3000 Å.159. The structure of claim 145, wherein the wafer conductive structuresare gold bumps and the seasoning layer is comprised of TiW.
 160. Thestructure of claim 145, wherein the wafer conductive structures aresolder bumps or copper interconnects and the seasoning layer iscomprised of Ti.
 161. The structure of claim 147, wherein the metalbarrier layer has a thickness of from about 50 to 5000 Å.
 162. Thestructure of claim 147, wherein the metal barrier layer has a thicknessof from about 100 to 3000 Å.
 163. The structure of claim 145, whereinthe upper metal structure is comprised of Cu, Ni, Au, Au/TiW, Cu/Ti,Ni/Cu/Ti, Cu/Cr or Ni/Cu Cr.
 164. The structure of claim 145, furthercomprising an intermetal dielectric layer over the wafer and the two ormore wafer conductive structures.
 165. The structure of claim 145,wherein there are at least two adjacent upper metal structures.
 166. Thestructure of claim 145, wherein the seasoning layer is comprised of TiWor Ti.
 167. The structure of claim 145, wherein the seasoning layer iscomprised of silicon oxide, silicon nitride or alumina.
 168. Thestructure of claim 145, wherein the seasoning layer is comprised ofsilicon oxide.